Microstructure investigation of BaxSr1−xTiO3 thin film grown on porous silicon substrate-Reference-Cited by-同舟云学术

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Microstructure investigation of BaxSr1−xTiO3 thin film grown on porous silicon substrate

Published:2004-01 Issue:4-6 Volume:7 Page:253-258
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Liu Weili,Xing Su,Lian J.,Wang Lumin,Song Zhitang,Lin Chenglu,Xu Z.K.,Chu Paul K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Semiconductor Industry Association. The national technology roadmap for semiconductors; 1994, 1997.

2. Epitaxial BaxSr1 − xTiO3/YBa2Cu3O7 bilayers for tunable microwave applications

3. Porous silicon: The material and its applications to SOI technologies

4. Epitaxial layer transfer by bond and etch back of porous Si

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5. Preparation and characterization of barium strontium titanate/silicon nanoporous pillar array composite thin films by a sol-gel method;International Journal of Minerals, Metallurgy, and Materials;2012-08

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