Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure-Reference-Cited by-同舟云学术

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Structures prepared by implantation of silicon with nitrogen and annealing under high hydrostatic pressure

Published:2004-01 Issue:4-6 Volume:7 Page:399-403
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Rzodkiewicz W.,Kudla A.,Misiuk A.,Surma B.,Bak-Misiuk J.,Härtwig J.,Ratajczak J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Physical integrated diffusion-oxidation model for implanted nitrogen in silicon

2. Effects of nitrogen and argon plasma-immersion ion implantation on silicon and its oxidation

3. Diffusion of implanted nitrogen in silicon

4. Silicon-on-insulator: materials aspects and applications

5. Influence of high pressure and temperature on defect structure of silicon crystals implanted with N or Si ions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain and defect engineering in Si/Si3N4/Si by high temperature–pressure treatment;Materials Science and Engineering: B;2005-12

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