I–V characteristics of Pt/HfO2/YBa2Cu3O7-x heterostructures

Author:

Liu Xiaoqin,Liu Jianbo,Li Wei,Sheng Qingqing,He Yusong,Jia Jiqiang

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. Resistive switching materials for information processing;Wang;Nat. Rev. Mater.,2020

2. Recent progress on visible-light-driven metal and non-metal doped ZnO nanostructures for photocatalytic degradation of organic pollutants;Sanakousar;Mater. Sci. Semicond. Process.,2022

3. Physical mechanism and performance factors of metal oxide based resistive switching memory: a review;Ye;J. Mater. Sci. Technol.,2016

4. Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering;Zhihua;Appl. Surf. Sci.,2021

5. Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure;Ambriz-Vargas;Appl. Phys. Lett.,2017

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