Growth and properties of one-dimensional β-Ga2O3 nanostructures on c-plane sapphire substrates-Reference-Cited by-同舟云学术

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Growth and properties of one-dimensional β-Ga2O3 nanostructures on c-plane sapphire substrates

Published:2018-03 Issue: Volume:75 Page:31-35
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hu Daqiang,Zhuang Shiwei,Dong Xin,Du Guotong,Zhang Baolin,Zhang Yuantao,Yin Jingzhi

Funder

National Natural Science Foundation of China

National Key Research and Development Program

Science and Technology Developing Project of Jilin Province

Program for New Century Excellent Talents in University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Annealing effects on the properties of Ga2O3 thin films grown on sapphire by the metal organic chemical vapor deposition;Kim;Appl. Surf. Sci.,2004

2. Enhanced yellow luminescence of amorphous Ga2O3 nanofibers with tunable crystallinity;Zhou;Ceram. Int.,2016

3. Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition;Zhang;J. Cryst. Growth,2014

4. Effect of annealing on β-Ga2O3 film grown by pulsed laser deposition technique;Goyal;J. Alloy. Compd.,2014

5. Heteroepitaxial growth of multidomain Ga2O3/sapphire(001) thin films deposited using radio frequency magnetron sputtering;Kang;Mater. Lett.,2014

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