Spectroscopic ellipsometry characterization of ZrO2 thin films by nitrogen-assisted reactive magnetron sputtering
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
3. Valence band structure and band alignment at the ZrO2/Si interface
4. Post deposition UV-induced O2 annealing of HfO2 thin films
5. Effect of O2post-deposition anneals on the properties of ultra-thin SiOx/ZrO2gate dielectric stacks
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