Band gap behavior of scandium aluminum phosphide and scandium gallium phosphide ternary alloys and superlattices-Reference-Cited by-同舟云学术

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Band gap behavior of scandium aluminum phosphide and scandium gallium phosphide ternary alloys and superlattices

Published:2015-03 Issue: Volume:31 Page:493-500
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Benalia S.,Merabet M.,Rached D.,Al-Douri Y.,Abidri B.,Khenata R.,Labair M.

Funder

University Malaysia Perlis

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference51 articles.

1. High-pressure phases of III-V zinc-blende semiconductors

2. Pseudopotential Hartree-Fock study of seventeen III-V and IV-IV semiconductors

3. First-principles calculation of Ga-based semiconductors

4. Cohesive energies of cubic III-V semiconductors

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3. Simultaneous improvements in strength and ductility of as-extruded Mg-1.0Sn-0.5Zn alloy via Ce addition in combination with pre-twining deformation;Journal of Alloys and Compounds;2022-12

4. A Computational Investigation of the Optoelectronic Characteristics of Chalcopyrite HgCP2;Intelligent Computing Techniques for Smart Energy Systems;2022

5. First-principles calculations to investigate electronic, optical, thermodynamic and thermoelectric properties of new Na6ZnX4 (X=O, S, Se) ternary alloys;Journal of Physics and Chemistry of Solids;2022-01

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