Suppression of short channel effects in 5.1 nm WTe2 in-plane Schottky barrier field-effect transistors by Mo-doping
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High‐Performance Black Phosphorus Field‐Effect Transistors with Controllable Channel Orientation;Advanced Electronic Materials;2023-01-23
2. Increasing of the ON-state current of 5.1 nm MoTe2 in-plane Schottky barrier field-effect transistors by O-passivation and W-doping;Applied Physics A;2022-07-20
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