Effects of RTA temperatures on conductivity and micro-structures of boron-doped silicon nanocrystals in Si-rich oxide thin films-Reference-Cited by-同舟云学术

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Effects of RTA temperatures on conductivity and micro-structures of boron-doped silicon nanocrystals in Si-rich oxide thin films

Published:2016-06 Issue: Volume:47 Page:7-11
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Huang Junjun,Wang Li,Sun Hongyan,Wang Hui,Gao Min,Cheng Wei,Chen Zhenming

Funder

Scientific Research Fund of Anhui Education Department

Opening Project of CAS Key Laboratory of Materials for Energy Conversion

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference31 articles.

1. Thermodynamics of the formation of face-centered-cubic silicon nanocrystals in silicon-rich SiC thin films annealed using rapid thermal annealing

2. Annealing temperature dependence of Raman scattering in Si/SiO2 superlattice prepared by magnetron sputtering

3. Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices

4. Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

5. Effects of phosphorus doping on structural and optical properties of silicon nanocrystals in a SiO2 matrix

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