Fast switching and low drift of TiSbTe thin films for phase change memory applications-Reference-Cited by-同舟云学术

Fast switching and low drift of TiSbTe thin films for phase change memory applications

Published:2019-03 Issue: Volume:91 Page:399-403
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Liu Yuan-Guang,Chen Yi-Feng,Cai Dao-Lin,Lu Yao-Yao,Wu Lei,Yan Shuai,Li Yang,Song Zhi-Tang

Funder

National Key Research and Development Program of China

Chinese Academy of Sciences

National Integrate Circuit Research Program of China

National Natural Science Foundation of China

Science and Technology Council of Shanghai

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

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3. A GeSbTe phase-change memory cell featuring a tungsten heater electrode for low-power, highly stable, and short-read-cycle operations;Takaura;IEEE Int. Electron Devices Meet.,2003

4. Highly reliable 50nm contact cell technology for 256Mb PRAM;Ahn;Dig. Tech. Pap. - Symp. VLSI Technol.,2005

5. Highly manufacturable high density phase change memory of 64Mb and beyond IEDM;Ahn;Tech. Dig. - Int. Electron Devices Meet.,2004

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