Predicting the band structure, transport properties, electronic fitness function and effective mass of PdTiSn indirect band-gap half-Heusler semiconductor-Reference-Cited by-同舟云学术

Predicting the band structure, transport properties, electronic fitness function and effective mass of PdTiSn indirect band-gap half-Heusler semiconductor

Published:2021-03 Issue: Volume:123 Page:105548
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ashani Timothy M.^ORCID,Sunmonu Rabiu S.^ORCID,Akinlami Johnson O.,Adebayo Gboyega A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference43 articles.

1. Evaluation of Half-Heusler Compounds as Thermoelectric Materials Based on the Calculated Electrical Transport Properties

2. Tunable multifunctional topological insulators in ternary Heusler compounds

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Elastic anisotropy, mechanical, lattice dynamics, and electronic properties of MPdZ (M = Hf, Zr, Ti; Z = Sn, Ge, Si). DFT study;Computational Condensed Matter;2024-06

2. Mechanical and dynamical stability, electronic and bonding properties of a new narrow-gap semiconductor YPdAs Half-Heusler: DFT and QTAIM study;Materials Science in Semiconductor Processing;2024-04

3. Structural, half-metallic, electronic, magnetic and pressure-induced elastic changes of PdVSi, PdVGe, PdVSn, and PdVSb alloys;Journal of Materials Science;2023-03

4. Predicting the Thermoelectric Performance of p-type VFeBi Based on Scattering Mechanisms;Journal of Electronic Materials;2022-12-12

5. DFT study of structural, mechanical, thermodynamic, electronic, and thermoelectric properties of new PdTi Z ( Z = Ge and Pb) half Heusler compounds;International Journal of Quantum Chemistry;2022-06