Growth, structural and electrical properties of AlN/Si (111) for futuristic MEMS applications-Reference-Cited by-同舟云学术

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Growth, structural and electrical properties of AlN/Si (111) for futuristic MEMS applications

Published:2021-03 Issue: Volume:123 Page:105567
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Pandey Akhilesh,Dutta Shankar,Kaushik Janesh,Gupta Nidhi,Gupta Garima,Raman R.,Kaur Davinder

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference51 articles.

1. Electrical characteristics of metal/AlN/n‐type 6H–SiC(0001) heterostructures;Aboelfotoh;Appl. Phys. Lett.,1996

2. Demonstration of a silicon field‐effect transistor using AlN as the gate dielectric;Stevens;Appl. Phys. Lett.,1995

3. A resonant Z-Axis Aluminum nitride thin-film piezoelectric MEMS accelerometer;Yang;Micromachines,2019

4. Influence of residual stress on performance of AlN thin film based piezoelectric MEMS accelerometer structure;Gupta;Microsyst. Technol.,2019

5. AlN film based piezoelectric large-aperture MEMS scanning micromirror integrated with angle sensors;Lei;J. Micromech. Microeng.,2018

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1. Tuning the electronic and piezoelectric properties of Janus Ga2XY (X/Y S, Se, Te) monolayers: A first-principles calculation;Materials Science in Semiconductor Processing;2024-08

2. Characteristics of aluminium nitride thin film prepared by pulse laser deposition with varying laser pulses;Optical Materials;2024-07

3. HR-XRD and AFM Analysis of AlN/SiC Structures for Optoelectronic Device Applications;Gazi University Journal of Science Part A: Engineering and Innovation;2024-06-29

4. Eliminating surface cracks in metal film-polymer substrate for reliable flexible piezoelectric devices;Engineering Science and Technology, an International Journal;2024-02

5. A strong dependence of sputtering power on c‐axis oriented aluminium nitride on Si (111): A structural and electrical study;IET Nanodielectrics;2024-01-03

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