Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure-Reference-Cited by-同舟云学术

Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure

Published:2021-12 Issue: Volume:5 Page:100138
ISSN:2666-9501
Container-title:Results in Optics
language:en
Short-container-title:Results in Optics

Author:

Firoz Haider Syed,Kumar Upendra^ORCID,Kattayat Sandhya,Josey Smitha,Ayaz Ahmad M.,Gupta Saral K.,Sharma Rakesh,Ezzeldien Mohammed,Alvi P.A.

Publisher

Elsevier BV

Reference52 articles.

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2. Transformation of type-II InAs/AlSb nanoscale heterostructure into type-I structure and improving interband optical gain;Alvi;Phys. Status Solidi Basic Res.,2017

3. Enhanced optical gain characteristics of InAlN/δ-GaN/InAlN nanoscale-heterostructure for D-UV applications;Alvi;Superlattices Microstruct.,2020

4. Room temperature continuous wave operation of λ~3-3.2μm quantum cascade lasers;Bandyopadhyay;Appl. Phys. Lett.,2012

5. Orientation dependence of optoelectronic properties in InAsN/GaSb quantum well laser diodes with W and M design;Ben Ahmed;Semicond. Sci. Technol.,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical gain calculation and structure optimization of type-II GaAsSb/InAs/InGaAs quantum well heterostructures;AIP Advances;2023-05-01

2. Designing of type-I AlN/GaN/InAlN quantum well heterostructure and investigating its optical characteristics;Optical and Quantum Electronics;2022-10-22