Implementable methods for characterizing single photon avalanche diode parameters-Reference-Cited by-同舟云学术

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Implementable methods for characterizing single photon avalanche diode parameters

Published:2024-07 Issue: Volume:16 Page:100709
ISSN:2666-9501
Container-title:Results in Optics
language:en
Short-container-title:Results in Optics

Author:

Rahmanpour Mahdi^ORCID,Erfanian Alireza,Afifi Ahmad,Khaje Mahdi,Fahimifar Mohammad Hossein

Publisher

Elsevier BV

Reference43 articles.

1. Ltd, B.R.E. 2020. Pigtailed coaxial single photon avalanche diode (SPAD) PGA-314-50; Available from: http://www.rmyelectronics.com/uploads/EN/TO46/PGA-314-50V3.1.pdf.

2. Room temperature quantum key distribution characteristics of low-noise InGaAs/InP single-photon avalanche diode;Baek;J. Korean Phys. Soc.,2021

3. Enhanced photon detection efficiency of silicon single photon avalanche photodetectors enabled by photon trapping structures;Bartolo-Perez,2018

4. Afterpulsing in InGaAs/InP single photon avalanche photodetectors;Ben-Michael,2006

5. SPAD figures of merit for photon-counting, photon-timing, and imaging applications: a review;Bronzi;IEEE Sens. J.,2015

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new quantum key distribution protocol to reduce afterpulse and dark counts effects;Results in Optics;2024-07

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