Effect of Ge doping on the material properties of sprayed Cu2SnS3 thin films-Reference-Cited by-同舟云学术

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Effect of Ge doping on the material properties of sprayed Cu2SnS3 thin films

Published:2023-07 Issue: Volume:12 Page:100499
ISSN:2666-9501
Container-title:Results in Optics
language:en
Short-container-title:Results in Optics

Author:

Sayed Mohamed H.,Gomaa Mohammed M.,Boshta Mostafa

Funder

National Research Centre

Publisher

Elsevier BV

Subject

Atomic and Molecular Physics, and Optics

Reference25 articles.

1. Fabrication of Cu2SnS3 thin films by sulfurization of evaporated Cu-Sn precursors for solar cells;Aihara;Phys. Status Solidi C,2013

2. Investigation on photovoltaic performance of Cu2SnS3 thin film solar cells fabricated by RF-sputtered In2S3 buffer layer;Akcay;J. Alloys Compd.,2023

3. Effects of disorder on carrier transport in Cu2SnS3;Baranowski;Phys. Rev. Appl.,2015

4. Thin film solar cells based on the ternary compound Cu2SnS3;Berg;Thin Solid Films,2012

5. Raman analysis of monoclinic Cu2SnS3 thin films;Berg;Appl. Phys. Lett.,2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Sulfide Annealing Conditions for Ag8SnS6 Thin Films;Materials;2023-09-19

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