Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs-Reference-Cited by-同舟云学术

Tuning effects in optimisation of GaAs-based InGaAs/GaAs quantum-dot VCSELs

Published:2008-06 Issue:11 Volume:281 Page:3163-3170
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Piskorski Łukasz,Wasiak Michał,Sarzała Robert P.,Nakwaski Włodzimierz

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. S. Mogg, Long-Wavelength Vertical-Cavity Lasers: Materials and Device Analysis, Doctoral Dissertation, Royal Institute of Technology (KTH), Stockholm, 2003.

2. S. Rapp, Long-Wavelength Vertical-Cavity Lasers Based on InP/GaInAsP Bragg Reflectors, Doctoral Dissertation, Royal Institute of Technology (KTH), Stockholm, 1999.

3. Wafer fused p-InP/p-GaAs heterojunctions

4. GaAs to InP wafer fusion

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