Comparison of module structure of wideband response GaAs photocathode grown by MBE and MOCVD-Reference-Cited by-同舟云学术

Comparison of module structure of wideband response GaAs photocathode grown by MBE and MOCVD

Published:2014-10 Issue: Volume:328 Page:129-134
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Zhao Jing,Shen Weikang,Chang Benkang,Zhang Yijun,Zhang Jian,Qin Cui^ORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Broadband GaAs transmission photocathode

2. Negative electron affinity gallium arsenide photocathode grown by molecular beam epitaxy

3. Comparison of the optical characteristics of GaAs photocathodes grown using MBE and MOCVD

4. High-Power ($> 110$ mW) Superluminescent Diodes by Using Active Multimode Interferometer

5. Thermal resistance reduction in high power superluminescent diodes by using active multi-mode interferometer

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cs/O co-adsorption on C-doped GaAs surface: From first-principles simulation to experiment;AIP Advances;2023-07-01

2. Photoemission from GaAs-based photocathodes with multilayer complex structures;International Journal of Modern Physics B;2022-06-08

3. Effect of multilayer complex buffer layer structures on photoelectric performance of GaAs-based photocathodes;Optical and Quantum Electronics;2022-06-06

4. Exploring optoelectronic properties of C-doped GaAs for photocathode application from first-principles calculation;AIP Advances;2022-01-01

5. Iterative correction of the thickness for transmission-mode GaAs photocathode optical performance;Optik;2018-12