Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission-Reference-Cited by-同舟云学术

Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission

Published:2006-04 Issue:2 Volume:260 Page:666-669
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Zhao Q.,Pan J.Q.,Zhang J.,Li B.X.,Zhou F.,Wang B.J.,Wang L.F.,Bian J.,Zhao L.J.,Wang W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. All-selective MOVPE-grown 1.3-μm strained multi-quantum-well buried-heterostructure laser diodes

2. Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices

3. Semiconductor lasers for planar integrated optoelectronics

4. Monolithic integration of an InGaAsP–InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD

5. Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion

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