Effects of InP crystallographic slope with light-input tapered SiOx facet on InGaAsP–InGaAs–InP waveguide photodetectors-Reference-Cited by-同舟云学术

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Effects of InP crystallographic slope with light-input tapered SiOx facet on InGaAsP–InGaAs–InP waveguide photodetectors

Published:2010-12 Issue:24 Volume:283 Page:5033-5039
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Yang Chyi-Da,Chen Chung-Nan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Ultrawide-band long-wavelength p-i-n photodetectors

2. In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling

3. Wet-chemistry surface treatment for dark-current reduction that preserves lateral dimensions of reactive ion etched Ga/sub 0.47/In/sub 0.53/As p-i-n diode photodetectors

4. High Output Saturation and High-Linearity Uni-Traveling-Carrier Waveguide Photodiodes

5. Analysis of partially depleted absorber waveguide photodiodes

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