Absorption threshold frequency of silicon nanowires: Effect of cross section shape-Reference-Cited by-同舟云学术

Absorption threshold frequency of silicon nanowires: Effect of cross section shape

Published:2015-01 Issue: Volume:334 Page:85-89
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Khordad R.,Bahramiyan H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. A quantum pseudodot system with a two-dimensional pseudoharmonic potential

2. Linear and nonlinear optical absorption coefficients in GaAs/Ga1−xAlxAs concentric double quantum rings: Effects of hydrostatic pressure and aluminum concentration

3. Effect of pressure on spin–orbit interaction in a quantum wire with V-shaped cross section

4. Donor-impurity related binding energy and photoinization cross-section in quantum dots: electric and magnetic fields and hydrostatic pressure effects

5. Electron-phonon interaction effect on the energy levels and diamagnetic susceptibility of quantum wires: Parallelogram and triangle cross section

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