The barrier height formation in ZnO varistors-Reference-Cited by-同舟云学术

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The barrier height formation in ZnO varistors

Published:1995-01 Issue:7 Volume:15 Page:605-615
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Mantas P.Q.,Baptista J.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference44 articles.

1. Electronic properties of silicon grain boundaries;Pike,1981

2. The dc voltage dependence of semiconductor grain boundary resistance;Pike;J. Appl. Phys.,1979

3. Grain boundary properties in ZnO varistors;Einzinger,1981

4. Grain boundary phenomena in ZnO varistors;Einzinger,1982

5. Investigation of various models for metal oxide varistors;Bernasconi;J. Elect. Mater.,1976

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