Thermal chemical vapour deposition of homoepitaxial diamond: dependence of surface morphology and defect structure on substrate orientation-Reference-Cited by-同舟云学术

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Thermal chemical vapour deposition of homoepitaxial diamond: dependence of surface morphology and defect structure on substrate orientation

Published:1991-08 Issue:1-3 Volume:47 Page:39-50
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

van Enckevort W.J.P.,Janssen G.,Vollenberg W.,Chermin M.,Giling L.J.,Seal M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference25 articles.

1. Vapor Deposition of Diamond Particles from Methane

2. Vapor growth of diamond on diamond and other surfaces

3. Current Issues and Problems in the Chemical Vapor Deposition of Diamond

4. Epitaxial growth of diamond on diamond substrate by plasma assisted CVD

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1. Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition;CrystEngComm;2020

2. Understanding the chemical vapor deposition of diamond: recent progress;Journal of Physics: Condensed Matter;2009-08-19

3. Micro-Raman scattering from undoped and phosphorous-doped (111) homoepitaxial diamond films: Stress imaging of cracks;Journal of Applied Physics;2005-02-15

4. Contact nucleation of steps: theory and Monte Carlo simulation;Journal of Crystal Growth;2003-11

5. GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition;Thin Solid Films;2003-10

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