Analysis of electrostatic discharge suppressors with ultra-low capacitance used for IC protection

Author:

Chen Hsing-Yi,Suo Ying,Kuo Cheng-Ta,Qiu Jinghui

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Biotechnology,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Esd: RF technology and circuits;Voldman,2006

2. C. Grewing, K. Winterberg, S. Waasen, M. Friedrich, G. Puma, A. Wiesbaue, Sandne, C. Fully integrated distributed power amplifier in CMOS technology, optimized for UWB transmitters. In: Proceeding of IEEE radio frequency integrated circuits symposium, 2004, pp. 87–90.

3. Low-capacitance and fast turn-on SCR for RF ESD protection;Lin;IEICE Trans. Electron,2008

4. Low-capacitance SCR with waffle layout structure for on-chip ESD protection in RF ICs;Ker;IEEE Trans. Microwave Theory Tech.,2008

5. Measurement of the magnetic field radiating by electrostatic discharges using commercial ESD generators;Fotis;Measurement,2006

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1. Neuro-fuzzy approach to identification of electromagnetic fields of electrostatic discharge;2023 5th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE);2023-03-16

2. Characteristic study on an ESD suppressor by the FDTD method;Journal of Electrostatics;2013-08

3. Performance improvement of an ESD suppressor by studying its characteristics;Journal of Physics: Conference Series;2013-03-22

4. Analysis of electrostatic environment and discharge models;2012 International Conference on Applied and Theoretical Electricity (ICATE);2012-10

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