InGaP/GaAs HBT DC-20GHz distributed amplifier with compact ESD protection circuits

Author:

Ma Yintat,Li G.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Biotechnology,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Y. Ma, G. Li, Low loading capacitance on-chip ESD protection circuit for telecom integrated circuits implemented by heterojunction bipolar transistors technology, US patent pending, application number: 60/349, 899.

2. Y. Ma, G. Li, A novel on-chip ESD protection circuit for GaAs HBT RF power amplifiers, in: Proceedings of the 24th Annual Electrical Overstress/Electrostatic Discharge Symposium, 2002, pp. 83–91.

3. A novel on-chip ESD protection circuit for GaAs HBT RF power amplifiers;Ma;J. Electrostatics,2003

4. Y. Ma, G. Li, InGaP/GaAs HBT RF power amplifier with compact ESD protection circuit, in: Proceeding of the 2004 IEEE MTT-S International Microwave Symposium, 2004, pp. 1171–1174.

5. A. Wang, et al., A Novel dual-direction IC ESD protection device, in Proceedings of the 7th IPFA, (1999) pp. 151–155.

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