Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes-Reference-Cited by-同舟云学术

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Electrically-detected magnetic resonance near the p-doped/n-doped interface of Si junction diodes

Published:1993-06 Issue: Volume:72 Page:119-125
ISSN:0927-7757
Container-title:Colloids and Surfaces A: Physicochemical and Engineering Aspects
language:en
Short-container-title:Colloids and Surfaces A: Physicochemical and Engineering Aspects

Author:

Poindexter E.H.,Rong F.C.,Buchwald W.R.,Gerardi G.J.,Keeble D.J.,Warren W.L.

Publisher

Elsevier BV

Subject

Colloid and Surface Chemistry

Reference31 articles.

1. Spin-dependent and localisation effects at Si/SiO2device interfaces

2. Spin physics of recombination centers in amorphous silicon

3. Spin dependent trapping in a polycrystalline silicon integrated circuit resistor

4. Spin-dependent recombination in a silicon p-n junction

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1. Electrical Characterization of HIT Type Solar Cells;Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells;2012

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