Modeling and simulation of electrochemical and surface diffusion effects in filamentary cation-based resistive memory devices
-
Published:2024-10
Issue:
Volume:134
Page:591-610
-
ISSN:0307-904X
-
Container-title:Applied Mathematical Modelling
-
language:en
-
Short-container-title:Applied Mathematical Modelling
Author:
Vaccaro FrancescoORCID,
Mauri Aurelio G.,
Perotto Simona,
Brivio Stefano,
Spiga SabinaORCID
Reference64 articles.
1. Redox-based resistive switching memories–nanoionic mechanisms, prospects, and challenges;Waser;Adv. Mater.,2009
2. Resistive random access memory (RRAM) technology: from material, device, selector, 3D integration to bottom-up fabrication;Chen;J. Electroceram.,2017
3. HfO2 -based resistive switching memory devices for neuromorphic computing;Brivio;Neuromorphic Comput. Eng.,2022
4. The future of electronics based on memristive systems;Zidan;Nat. Electron.,2018
5. Memristive Devices for Brain-Inspired Computing;Spiga,2020