Fabrication of g-C3N4 films with enhanced mechanical and charge transfer properties by electrophoretic deposition and subsequent citric acid modification-Reference-Cited by-同舟云学术

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Fabrication of g-C3N4 films with enhanced mechanical and charge transfer properties by electrophoretic deposition and subsequent citric acid modification

Published:2024-05 Issue:5 Volume:35 Page:104460
ISSN:0921-8831
Container-title:Advanced Powder Technology
language:en
Short-container-title:Advanced Powder Technology

Author:

Wongchaiya Preyaphat,Nguyen Thi Kim Ngan,Sujaridworakun Pornapa,Larpkiattaworn Siriporn^ORCID,Suzuki Tohru S.,Uchikoshi Tetsuo^ORCID

Funder

National Institute for Materials Science

Institute for the Promotion of Teaching Science and Technology

Ministry of Education

Publisher

Elsevier BV

Reference55 articles.

1. III-V compound SC for optoelectronic devices;Mokkapat;Mater. Today,2009

2. A review on optoelectronic device applications of 2D transition metal carbides and nitrides;Zhang;Mater. Des.,2021

3. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies;Yoon;Nature,2010

4. Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications;Joyce;IEEE J. Sel. Top. Quantum Electron.,2021

5. Heterostructures in Two-dimensional CdSe nanoplatelets:synthesis, optical properties, and applications;Zhang;Chem. Mater.,2020

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