The preparation of flat H–Si(111) surfaces in 40% NH4F revisited-Reference-Cited by-同舟云学术

The preparation of flat H–Si(111) surfaces in 40% NH4F revisited

Published:2000-10 Issue:28 Volume:45 Page:4591-4598
ISSN:0013-4686
Container-title:Electrochimica Acta
language:en
Short-container-title:Electrochimica Acta

Author:

Allongue Philippe,Henry de Villeneuve Catherine,Morin Sylvie,Boukherroub Rabah,Wayner Danial D.M.

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Reference24 articles.

1. Y. Fukukawa, Y. Mori, T. Kataoka, Proceedings of the Conference Precision Science and Technology for Perfect Surfaces, The Japan Society for Precision Engineering, Tokyo, 1999.

2. Ideal hydrogen termination of the Si (111) surface

3. Influence of silicon oxide on the morphology of HF‐etched Si(111) surfaces: Thermal versus chemical oxide

4. Chemical etching of vicinal Si(111): Dependence of the surface structure and the hydrogen termination on the pH of the etching solutions

5. Step-flow mechanism versus pit corrosion: scanning-tunneling microscopy observations on wet etching of Si(111) by HF solutions

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