Hole diffusion length and temperature dependence of photovoltages for n-Si electrodes modified with LB layers of ultrafine platinum particles-Reference-Cited by-同舟云学术

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Hole diffusion length and temperature dependence of photovoltages for n-Si electrodes modified with LB layers of ultrafine platinum particles

Published:1997-01 Issue:3 Volume:42 Page:431-437
ISSN:0013-4686
Container-title:Electrochimica Acta
language:en
Short-container-title:Electrochimica Acta

Author:

Jia Jianguang,Fujitani Morio,Yae Shinji,Nakato Yoshihiro

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Reference21 articles.

1. Photoelectrochemical and Photovoltaics of Layered Semiconductors,1992

2. High Efficiency Silicon Solar Cells,1987

3. Solar cell efficiency tables

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1. Strategies To Construct n-Type Si-Based Heterojunctions for Photoelectrochemical Water Oxidation;ACS Materials Letters;2022-03-29

2. Evaluation of Electroless Pt Deposition and Electron Beam Pt Evaporation on p-GaAs as a Photocathode for Hydrogen Evolution;ACS Applied Energy Materials;2018-12-06

3. Various Active Metal Species Incorporated within Molecular Layers on Si(111) Electrodes for Hydrogen Evolution and CO2 Reduction Reactions;The Journal of Physical Chemistry C;2016-06-27

4. Effects of Localized Surface Charges on a Two-Dimensional Potential Distribution and Photovoltage at a Schottky Barrier of a Semiconductor Electrode;The Journal of Physical Chemistry C;2012-12-20

5. ChemInform Abstract: Hole Diffusion Length and Temperature Dependence of Photovoltages for n-Si Electrodes Modified with Langmuir-Blodgett Layers of Ultrafine Platinum Particles.;ChemInform;2010-08-04

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