Growth of SiC grains by gas evaporation method and relationship between optical properties and structure of SiC grains-Reference-Cited by-同舟云学术

Growth of SiC grains by gas evaporation method and relationship between optical properties and structure of SiC grains

Published:1995-10 Issue:10-11 Volume:43 Page:1271-1281
ISSN:0032-0633
Container-title:Planetary and Space Science
language:en
Short-container-title:Planetary and Space Science

Author:

Kaito C.,Nakamura H.,Sakamoto T.,Kimura S.,Shiba N.,Yoshimura Y.,Nakayama Y.,Saito Y.,Koike C.

Publisher

Elsevier BV

Subject

Space and Planetary Science,Astronomy and Astrophysics

Reference20 articles.

1. Preparation of ultrafine particles of refractory metal carbides by a gas-evaporation method;Ando;J. Cryst. Growth,1981

2. The absorption properties of submicron SiC particles between 2.5 and 40 μm;Borghesi;Infrared Phys.,1983

3. The 11.5 micrometer emission from carbon stars: comparison with IR spectra of submicronmeter-sized silicon carbide grains;Friedemann;Astrophys. Space Sci.,1981

4. On the crystal lattice defects in metallic fine particles;Fujita;Nihon Kinzoku Gakkaishi,1966

5. High resolution electron microscopic studies of defects in CdTe smoke particles;Fujita;J. Cryst. Growth,1985

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4. Demonstration of crystalline forsterite grain formation due to coalescence growth of Mg and SiO smoke particles;Meteoritics & Planetary Science;2003-01

5. Growth of SiC by Reaction between Thin Films and Ultrafine Particles;Japanese Journal of Applied Physics;1999-01-15