MAGNETRON ENHANCED REACTIVE ION ETCHING (MERIE) MODE PLASMA-INDUCED DEFECTS IN SiO2-Si MICROSTRUCTURES-Reference-Cited by-同舟云学术

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MAGNETRON ENHANCED REACTIVE ION ETCHING (MERIE) MODE PLASMA-INDUCED DEFECTS IN SiO2-Si MICROSTRUCTURES

Published:2001 Issue: Volume: Page:387-404
ISSN:
Container-title:Handbook of Surfaces and Interfaces of Materials
language:
Short-container-title:

Author:

Atanassova E.

Publisher

Elsevier

Reference54 articles.

1. Detailed measurements and simplified modeling of wafer charging in different barrel reactor configurations

2. Plasma‐charging damage: A physical model

3. A model and experiments for thin oxide damage from wafer charging in magnetron plasmas

4. High Flux Reactive Ion Etching in a Magnetic Multipole Reactor;Kuypers,1989

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluorine-free high-resolution selective plasma etching of silicon-oxide layers on silicon substrates;Journal of Physics D: Applied Physics;2010-09-14

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