Characterization of high Zn content Cd0.87Zn0.13Te0.98Se0.02 grown using Bridgman technique-Reference-Cited by-同舟云学术

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Characterization of high Zn content Cd0.87Zn0.13Te0.98Se0.02 grown using Bridgman technique

Published:2024-09 Issue: Volume:211 Page:111383
ISSN:0969-8043
Container-title:Applied Radiation and Isotopes
language:en
Short-container-title:Applied Radiation and Isotopes

Author:

Kim Yonghoon,Ko Juyoung,Byun Jangwon,Seo Jiwon,Park Hye Min,Park Beomjun^ORCID

Publisher

Elsevier BV

Reference33 articles.

1. The effect of etching time on the CdZnTe surface;Bensalah;Appl. Surf. Sci.,2011

2. Effects of Te inclusions on the performance of CdZnTe radiation detectors;Bolotnikov;IEEE Trans. Nucl. Sci.,2008

3. Characterization and evaluation of extended defects in CZT crystals for gamma-ray detectors;Bolotnikov;J. Cryst. Growth,2013

4. Drift time variations in CdZnTe detectors measured with alpha-particles: their correlation with the detector's responses;Butcher;IEEE Trans. Nucl. Sci.,2013

5. Growth and characterization of detector-grade CdMnTeSe;Byun;Nucl. Eng. Technol.,2022

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