Selective ion sensors based on ionophore-modified graphene field-effect transistors-Reference-Cited by-同舟云学术

Selective ion sensors based on ionophore-modified graphene field-effect transistors

Published:2013-10 Issue: Volume:187 Page:45-49
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Maehashi Kenzo,Sofue Yasuyuki,Okamoto Shogo,Ohno Yasuhide,Inoue Koichi,Matsumoto Kazuhiko

Funder

New Energy and Industrial Technology Development Organization (NEDO)

Japan Science and Technology Agency (JST)

Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT)

MEXT

Japan Society for the Promotion of Science Core-to-Core Program

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference45 articles.

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5. Current saturation in zero-bandgap, top-gated graphene field-effect transistors;Meric;Nature Nanotechnology,2008

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