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Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique

  • Published:2005-07 Issue:3-4 Volume:280 Page:419-424
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Kitamura Masayuki,Usami Noritaka,Sugawara Takamasa,Kutsukake Kenrato,Fujiwara Kozo,Nose Yoshitaro,Shishido Toetsu,Nakajima Kazuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. T. Saitoh, Proceedings of the Third World Conference on Photovoltaic Energy Conversion, vol. 25, 2003.

2. K. Nakajima, N. Usami, K. Fujiwara, Y. Nose, unpublished.

3. Growth of stable dislocation‐free 3‐grain silicon ingots for thinner slicing

4. Mono- and tri-crystalline Si for PV application

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1. Analysis of Structural Development and Defects during the Anisotropic Growth of Silicon;The Journal of Physical Chemistry B;2022-10-17

2. In situ observation of multiple parallel (1 1 1) twin boundary formation from step-like grain boundary during Si solidification;Applied Physics Express;2020-09-15

3. Mono-like cast method;Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces;2020

4. Growth of Si multicrystalline ingots using the conventional cast method;Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces;2020

5. Growth of Crystalline Silicon for Solar Cells: Mono-Like Method;Handbook of Photovoltaic Silicon;2019
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