Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2 (0001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
1. Zinc-blende–wurtzite polytypism in semiconductors
2. Structural and Dynamical Properties of Zincblende GaN
3. Basal-plane stacking faults and polymorphism in AlN, GaN, and InN
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5. Temperature‐mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substrates
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1. Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires;Applied Physics Letters;2024-07-22
2. Effect of substrate temperature on the properties of ZrB2film on Si(111) deposited by pulsed DC magnetron sputtering;Japanese Journal of Applied Physics;2014-08-21
3. Mixed Phases at the Bottom Interface of Si-Doped AlGaN Epilayers of Optoelectronic Devices;Journal of Nanomaterials;2014
4. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12
5. Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates;physica status solidi (a);2007-12
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