AlAs-in-AlSb digital alloy superlattice morphology versus growth temperature

Author:

Boishin G.I.,Canedy C.L.,Vurgaftman I.,Meyer J.R.,Whitman L.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates

2. Stoichiometry-induced roughness on antimonide growth surfaces

3. J.G. Tischler, E.H. Aifer, E.M. Jackson, I. Vurgaftman, J.R. Meyer, J.C. Kim, L.J. Whitman, in: Proceedings of the 2005 Parallel Meetings of the Military Sensing Symposia (MSS) Specialty Groups on Passive Sensors; Camouflage, Concealment, and Deception; Detectors; and Materials, vol. II (SENSIAC, Atlanta, Georgia, 2005).

4. Digital integrated circuit using integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb RITDs

5. Midinfrared “W” diode lasers with improved electrical characteristics

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