Growth of InAs/InP(001) nanostructures: The transition from quantum wires to quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Strain-engineered InAs/GaAs quantum dots for long-wavelength emission
2. Monolithic, GaInNAsSb VCSELs at 1.46 [micro sign]m on GaAs by MBE
3. Room-temperature operation of InAs quantum-dash lasers on InP [001]
4. Self-assembled InAs quantum wires on InP(001)
5. Alloying effects in self-assembled InAs/InP dots
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1. N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization;Crystals;2023-04-19
2. Strain-driven quantum dot self-assembly by molecular beam epitaxy;Journal of Applied Physics;2020-07-21
3. Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces;Physical Review Materials;2019-08-26
4. Preferential sites for InAsP/InP quantum wire nucleation using molecular dynamics;The European Physical Journal B;2014-11
5. Growth of Low-Dimensional Semiconductors Structures;Comprehensive Semiconductor Science and Technology;2011
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