Encapsulation of the heteroepitaxial growth of wide band gap γ-CuCl on silicon substrates-Reference-Cited by-同舟云学术

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Encapsulation of the heteroepitaxial growth of wide band gap γ-CuCl on silicon substrates

Published:2006-01 Issue:1 Volume:287 Page:112-117
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lucas F.O.,O’Reilly L.,Natarajan G.,McNally P.J.,Daniels S.,Taylor D.M.,William S.,Cameron D.C.,Bradley A.L.,Miltra A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Some Optical Properties of CuCl Single Crystals

2. Bound-biexciton photoluminescence in CuCl thin films grown by vacuum deposition

3. Introduction to Semiconductor Physics;Grahn,1999

4. Growth and applications of Group III-nitrides

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