Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy-Reference-Cited by-同舟云学术

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Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

Published:2016-02 Issue: Volume:435 Page:56-61
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Craig A.P.,Carrington P.J.,Liu H.,Marshall A.R.J.

Funder

UK Engineering and Physical Sciences Research Council

Royal Academy of Engineering

P. J. Carrington and the Royal Society

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. The development of room temperature LEDs and lasers for the mid-infrared spectral range

2. Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys

3. High performance uncooled InAsSbP/InGaAs photodiodes for the 1.8–3.4 μm wavelength range

4. Novel plastic strain‐relaxation mode in highly mismatched III‐V layers induced by two‐dimensional epitaxial growth

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1. Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes;ACS Applied Materials & Interfaces;2023-11-18

2. Defect formation in InGaAs/AlSb/InAs memory devices;Journal of Vacuum Science & Technology B;2023-05-25

3. ULTRARAM: Toward the Development of a III–V Semiconductor, Nonvolatile, Random Access Memory;IEEE Transactions on Electron Devices;2021-05

4. The role of antiphase domain boundary density on the surface roughness of GaSb epilayers grown on Si (001) substrates;Superlattices and Microstructures;2020-04

5. A comparative study on GaSb epilayers grown on nominal and vicinal Si(100) substrates by molecular beam epitaxy;Semiconductor Science and Technology;2020-02-01

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