MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors-Reference-Cited by-同舟云学术

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MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors

Published:2015-09 Issue: Volume:426 Page:54-60
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nattermann L.,Ludewig P.,Meckbach L.,Ringler B.,Keiper D.,von Hänisch C.,Stolz W.,Volz K.

Funder

German Research Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Band engineering in dilute nitride and bismide semiconductor lasers

2. Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

3. Valence band anticrossing in GaBixAs1−x

4. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy

5. Temperature dependence of long wavelength semiconductor lasers

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates;Crystal Growth & Design;2021-09-29

2. Metal-organic vapor phase epitaxy of the quaternary metastable alloy In1–xGaxAs1−yBiy and its kinetics of growth;Journal of Crystal Growth;2020-05

3. Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates;Journal of Applied Physics;2019-08-28

4. Synthesis and crystal structures of novel tertiary butyl substituted (pseudo-)halogen bismuthanes;Dalton Transactions;2019

5. MOVPE Growth and Device Applications of Ternary and Quaternary Dilute Bismide Alloys on GaAs Substrates;Bismuth-Containing Alloys and Nanostructures;2019

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