Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy-Reference-Cited by-同舟云学术

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Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy

Published:2015-09 Issue: Volume:425 Page:245-249
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Beaudoin M.,Lewis R.B.,Andrews J.J.,Bahrami-Yekta V.,Masnadi-Shirazi M.,O’Leary S.K.,Tiedje T.

Funder

Natural Sciences and Engineering Research Council (NSERC) of Canada

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. Growth and properties of the dilute bismide semiconductor GaAs_{1−xBi_{x a complementary alloy to the dilute nitrides}}

2. Absorption Characteristics of ${\rm GaAs}_{1-x}{\rm Bi}_{x}/{\rm GaAs}$ Diodes in the Near-Infrared

3. Giant Spin-Orbit Bowing inGaAs1−xBix

4. Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs

5. Characteristics of Semiconductor Alloy GaAs1-xBix

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2. The impact of processing on the optical absorption onset of CdTe thin-films and solar cells;Journal of Applied Physics;2021-04-28

3. Characterization of tellurium and silicon as n-type dopants for GaAsBi;Semiconductor Science and Technology;2020-08-27

4. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates;Semiconductor Science and Technology;2018-07-17

5. Photoreflectance and photoreflectance excitation study of optical transitions in GaAsBi/GaAs heterostructure;Journal of Applied Physics;2018-01-21

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