Superheating suppresses structural disorder in layered BiI3 semiconductors grown by the Bridgman method-Reference-Cited by-同舟云学术

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Superheating suppresses structural disorder in layered BiI3 semiconductors grown by the Bridgman method

Published:2016-01 Issue: Volume:433 Page:153-159
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Johns Paul M.,Sulekar Soumitra,Yeo Shinyoung,Baciak J.E.,Bliss Mary,Nino Juan C.

Funder

U.S. Department of Energy

DOE

Office of Biological and Environmental Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Compound Semiconductor Radiation Detectors;Owens,2012

2. Radiation detector materials: an overview;Milbrath;J. Mater. Res.,2008

3. Room-temperature replacement for ge detectors – are we there yet?;Luke;IEEE Trans. Nucl. Sci.,2007

4. Extended defects in CdZnTe radiation detectors;Bolotnikov;IEEE Trans. Nucl. Sci.,2009

5. Cadmium zinc telluride and its use as a nuclear radiation detector material;Schlesinger;Mater. Sci. Eng.: R: Rep.,2001

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