Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer-Reference-Cited by-同舟云学术

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

Published:2015-09 Issue: Volume:425 Page:268-273
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Alaskar Yazeed,Arafin Shamsul^ORCID,Lin Qiyin,Wickramaratne Darshana,McKay Jeff,Norman Andrew G.,Zhang Zhi,Yao Luchi,Ding Feng,Zou Jin,Goorsky Mark S.,Lake Roger K.,Zurbuchen Mark A.,Wang Kang L.

Funder

MARCO

DARPA

National Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Fabrication and characterization of heterostructures with subnanometer thickness

2. Van der Waals epitaxy of metal dihalide

3. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

4. Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth

5. Nanoscale Growth of GaAs on Patterned Si(111) Substrates by Molecular Beam Epitaxy

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