On the shape of n-type Czochralski silicon top ingots-Reference-Cited by-同舟云学术

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On the shape of n-type Czochralski silicon top ingots

Published:2015-05 Issue: Volume:418 Page:176-184
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gaspar Guilherme,Juel Mari,Søndenå Rune,Pascoa Soraia,Di Sabatino Marisa,Arnberg Lars,Øvrelid Eivind J.

Funder

Norwegian Research Center for Solar Cell Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Growth of silicon crystals free from dislocations;Dash;J. Appl. Phys.,1959

2. Grown-in defects in silicon produced by agglomeration of vacancies and self-interstitials;Voronkov;J. Cryst. Growth,2008

3. Thermal double donors in silicon;Wagner;Appl. Phys. A,1989

4. Oxygen distribution in silicon melt during a standard Czochralski process studied by sensor measurements and comparison to numerical simulation;Mühe;J. Cryst. Growth,1999

5. Macroscopic uniformity of oxygen concentration in Czochralski silicon crystals closely related to evaporation of sio from the free surface of melts;Maeda;Electrochem. Soc.,2003

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD simulation of electrical characteristics of silicon tunnel junctions for monolithically integrated silicon/perovskite tandem solar cells;INTERNATIONAL CONFERENCE ON SUSTAINABLE MATERIALS SCIENCE, STRUCTURES, AND MANUFACTURING;2023

2. Possible causes of electrical resistivity distribution inhomogeneity in Czochralski grown single crystal silicon;Modern Electronic Materials;2019-03-01

3. Identification of Lifetime-limiting Defects in As-received and Heat Treated Seed-end Czochralski Wafers;Energy Procedia;2016-08

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