Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates-Reference-Cited by-同舟云学术

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Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates

Published:2015-09 Issue: Volume:426 Page:287-292
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wang Xiaoye,Du Wenna,Yang Xiaoguang,Zhang Xingwang,Yang Tao

Funder

MOST

Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference42 articles.

1. InAs/InP radial nanowire heterostructures as high electron mobility devices;Jiang;Nano Lett.,2007

2. Tunnel field-effect transistor using InAs nanowire/Si heterojunction;Tomioka;Appl. Phys. Lett.,2011

3. Gas sensing with vertical functionalized InAs nanowire arrays;Offermans;Proc. Eng.,2010

4. Nanowire resonant tunneling diodes;Bjork;Appl. Phys. Lett.,2002

5. Single-electron transistors in heterostructure nanowires;Thelander;Appl. Phys. Lett.,2003

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1. New growth mechanism of InAs-GaSb core-shell nanowires with polygonal triangular pyramids and quantum dots grown by MOCVD;Vacuum;2024-07

2. Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD;Journal of Alloys and Compounds;2024-06

3. A systematic study on self-catalyzed growth of InAs/GaSb axial heterostructured nanowires by MOCVD;Vacuum;2024-02

4. New growth mechanism of InAs nanowires array in selective-area growth by MOCVD;Vacuum;2023-02

5. A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates;Vacuum;2022-07

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