Tuning band gap and ferromagnetism in epitaxial Al-doped SnO2 films by defect engineering-Reference-Cited by-同舟云学术

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Tuning band gap and ferromagnetism in epitaxial Al-doped SnO2 films by defect engineering

Published:2015-11 Issue: Volume:430 Page:75-79
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yang Yuzhe,Zhou Wei,Liang Yinghua,Liu Li,Wu Ping

Funder

National Natural Science Foundation of China

Tianjin Natural Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. Thin-wall assembled SnO2 fibers functionalized by catalytic Pt nanoparticles and their superior exhaled-breath-sensing properties for the diagnosis of diabetes;Shin;Adv. Funct. Mater.,2013

2. Wavelength-tuned light emission via modifying the band edge symmetry: doped SnO2 as an example;Zhou;J. Phys. Chem.,2014

3. Thin films: unexpected magnetism in a dielectric oxide;Venkatesan;Nature,2004

4. Oxygen-vacancy-induced ferromagnetism in undoped SnO2 thin films;Chang;Phys. Rev. B,2012

5. Multi-roles of Cu ions in the ferromagnetic properties of (Cu, Al)-codoped ZnO thin films;Zhuo;J. Cryst. Growth,2011

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