Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN-Reference-Cited by-同舟云学术

Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN

Published:2015-10 Issue: Volume:427 Page:99-103
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Semmelroth K.,Berwian P.,Schröter C.,Leibiger G.,Schönleber M.,Friedrich J.

Funder

HVPE-GaN

European Regional Development Fund (ERDF)

Ministry of Economics and Employment of the German state of Saxony

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

2. Growth of single crystal GaN substrate using hydride vapor phase epitaxy

3. Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor

4. Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers

5. Bulk GaN crystals grown by HVPE

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