Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors-Reference-Cited by-同舟云学术

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Molecular beam epitaxy growth of antimony-based mid-infrared interband cascade photodetectors

Published:2015-09 Issue: Volume:425 Page:364-368
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tian Zhao-Bing,Schuler-Sandy Ted,Krishna Sanjay,Tang Dinghao,Smith David J.

Funder

AFOSR, United States

Los Alamos National Laboratory

Sandia National Laboratories, United States

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Recent progress in infrared detector technologies;Rogalski;Infrared Phys. Technol.,2011

2. Update on III-V antimonide-based superlattice FPA development and material characterization;Zheng;Proc. SPIE,2011

3. Stacked multi-junction photodetectors for long-wavelength radiation;Piotrowski;J. Electron. Mater.,2003

4. Interband cascade infrared photodetectors with superlattice absorbers;Yang;J. Appl. Phys.,2010

5. Type-II InAs/GaSb superlattice midwave infrared photodetectors based on interband cascade structures for high temperature operations;Tian;J. Appl. Phys.,2012

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3. A new monolithic approach for mid-IR focal plane arrays;SPIE Proceedings;2016-10-21

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