In-situ monitoring during MBE growth of InAs based heterostructures-Reference-Cited by-同舟云学术

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In-situ monitoring during MBE growth of InAs based heterostructures

Published:2015-09 Issue: Volume:425 Page:16-20
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Bhatnagar Kunal,Rojas-Ramirez Juan,Caro Manuel,Contreras Rocio,Henninger Bernd,Droopad Ravi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Recent progress in infrared detector technologies;Rogalski;Infrared Phys. Technol.,2011

2. Integrated nanoelectronics for the future

3. III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates

4. Growth of heterostructures on InAs for high mobility device applications

5. MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular-Beam Epitaxy of Antimonides for Optoelectronic Devices;Molecular Beam Epitaxy;2019-02-08

2. MBE growth techniques for InAs-based nBn IR detectors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-03

3. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE;Journal of Physics D: Applied Physics;2016-10-04

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