Effect of high temperature homoepitaxial growth of β-Ga2O3 by hot-wall metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Effect of high temperature homoepitaxial growth of β-Ga2O3 by hot-wall metalorganic vapor phase epitaxy

Published:2022-03 Issue: Volume:582 Page:126520
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ikenaga Kazutada,Tanaka Nami,Nishimura Taro,Iino Hirotaka,Goto Ken,Ishikawa Masato,Machida Hideaki,Ueno Tomo,Kumagai Yoshinao

Funder

Ministry of Internal Affairs and Communications

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MOCVD growth of Si-doped α-(AlGa)₂O₃ on m-plane α-Al₂O₃ substrates;Japanese Journal of Applied Physics;2024-07-01

2. A review on synthesis and applications of gallium oxide materials;Advances in Colloid and Interface Science;2024-06

3. Assessment of the β-Ga2O3 substrate orientation for µm-level-thick layers via MOVPE process;2024-05-02

4. Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure;Applied Physics Letters;2024-03-11

5. High-speed growth of thick high-purity β-Ga₂O₃ layers by low-pressure hot-wall metalorganic vapor phase epitaxy;Applied Physics Express;2023-09-01

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