Effect of annealing temperatures on properties of CuAlO2 films prepared by sol-gel method on 4H-SiC substrates-Reference-Cited by-同舟云学术

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Effect of annealing temperatures on properties of CuAlO2 films prepared by sol-gel method on 4H-SiC substrates

Published:2023-02 Issue: Volume:603 Page:127005
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hu Jichao,Meng Jiaqi,Xu Bei,He Xiaomin,Wang Xi,Lin Tao

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. SiC and GaN high-voltage power switching devices;Chow;Mater. Sci. Forum,2000

2. Study of a new type nominal “washboard-like” triangular defects in 4H-SiC 4 off-axis (0 0 0 1) Si-face homoepitaxial layers;Hu;J. Cryst. Growth,2019

3. Analytical and numerical studies of p+- emitters in silicon carbide bipolar devices;Levinshtein;Semicond. Sci. Technol.,2011

4. Origin of p-type conduction in single-crystal CuAlO2;Tate;Phys. Rev. B,2009

5. Photovoltage characterization of CuAlO2 crystallites;Dittrich;Appl. Phys. Lett.,2004

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of annealing on crystallinity and electrical properties of Bi1.5MgNb1.5O7 thin films;Ceramics International;2024-07

2. Highly sensitive and stable room-temperature gas sensors based on the photochemically activated p-type CuAlO2 thin films;Materials Chemistry and Physics;2023-11

3. A comprehensive review on the preparation and applications of delafossite CuAlO2 optoelectronic functional materials;Materials Science in Semiconductor Processing;2023-11

4. Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment;Materials Today Advances;2023-08

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